PART |
Description |
Maker |
RM50C1A-XXF RM50DA/CA/C1A-XXF RM50CA-XXF RM50DA-XX |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
10ETF02STRL 10ETF02STRR 10ETF06STRL 10ETF06STRR 10 |
DIODE 10 A, 600 V, SILICON, RECTIFIER DIODE, D2PAK-3, Rectifier Diode FAST SOFT RECOVERY RECTIFIER DIODE 快速软恢复整流二极 200V Fast Recovery Diode in a D2-Pak package 400V Fast Recovery Diode in a D2-Pak package 600V Fast Recovery Diode in a D2-Pak package
|
Vishay Semiconductors International Rectifier, Corp. IRF[International Rectifier]
|
RM200DA-24F |
200 A, 1200 V, SILICON, RECTIFIER DIODE Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
70EPF12J 70EPF10 70EPF10J 70EPF12 70EPF08 |
1200V Fast Recovery Diode in a PowIRtab package 1000V Fast Recovery Diode in a PowIRtab package 800V Fast Recovery Diode in a PowIRtab package FAST SOFT RECOVERY RECTIFIER DIODE
|
International Rectifier
|
SD803C04S10C SD803C08S10C SD803C10S10C SD803C12S15 |
800V Fast Recovery Diode in a B-43 (E-Puk) package 1000V Fast Recovery Diode in a B-43 (E-Puk) package 1200V Fast Recovery Diode in a B-43 (E-Puk) package 1400V Fast Recovery Diode in a B-43 (E-Puk) package 1600V Fast Recovery Diode in a B-43 (E-Puk) package
|
International Rectifier
|
RM20HA-XXF RM20 |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
SD1053C18S20L SD1053C18S30L SD1053C22S20L SD1053C2 |
920 A, 2200 V, SILICON, RECTIFIER DIODE, DO-200AB 1050 A, 2200 V, SILICON, RECTIFIER DIODE, DO-200AB 3000V Fast Recovery Diode in a DO-200AB (B-Puk) package 2800V Fast Recovery Diode in a DO-200AB (B-Puk) package 2500V Fast Recovery Diode in a DO-200AB (B-Puk) package 2200V Fast Recovery Diode in a DO-200AB (B-Puk) package 1800V Fast Recovery Diode in a DO-200AB (B-Puk) package
|
VISHAY SEMICONDUCTORS International Rectifier
|